A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process

This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar transistor (DHBT) technology. The proposed common-emitter contains five stages, and bias circuits are used in the matching network to obtain stable high gain range. measurement results demonstrate peak of 19.5 dB at 146 GHz 3 bandwidth 56–161 (relative 96.8%). saturation output power achieves 5.9 6.5 dBm 94 140 GHz, respectively. 1 compression is −4.7 with an input −23 GHz. has compact chip size 1.2 × 0.7 mm2, including DC RF pads.